The role of SrRuO3 bottom layer in strain relaxation of BiFeO3 thin films deposited on lattice mismatched substrates
Abstract
The present study deals with BiFeO3 and SrRuO3 thin films deposited on large lattice mismatched substrates like LaAlO3, MgO, and SrTiO3. The 80 nm thickness BiFeO3 films deposited directly on LaAlO3 substrate are highly constrained, while those on SrTiO3 substrate are only somewhat constrained. The BiFeO3 films deposited with 50 nm SrRuO3 bottom layer are fully relaxed on all the three substrates. The separate SrRuO3 layers deposited under identical conditions on these substrates are also found to be relaxed. These films exhibit different morphological features in accordance with strain relaxation process. The BiFeO3 thin films show characteristic low magnetic moment resulting from antiferromagnetic ordering irrespective of substrate induced strain.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2011
- Source ID
- 10.1063/1.3564940
Entities
People
- Arunava Gupta
- Dipanjan Mazumdar
- Gopalakrishnan Srinivasan
- Vilas Shelke
Organizations
- Barkatullah University
- National Science Foundation
- Oakland University
- Office of Naval Research
- University of Alabama