Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
Abstract
We present in-plane CoFeB–MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/cm2 are obtained at 10 ns write times.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 14, 2011
- Source ID
- 10.1063/1.3567780
Entities
People
- G. Rowlands
- Hong-Wen Jiang
- Hongping Zhao
- I. N. Krivorotov
- J. A. Katine
- J. Langer
- J.-p. Wang
- K. Galatsis
- K. L. Wang
- P. Khalili Amiri
- Y. Huai
- Y.-j. Chen
- Z. M. Zeng
Organizations
- Avalanche Technology
- Defense Advanced Research Projects Agency
- HGST
- Singulus Technologies
- University of California
- University of Minnesota