Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device
Abstract
Ballistic electron transport at nanoscale dimensions is investigated and exploited in a nanoscale three-terminal, all-electrical spintronic semiconductor device. Charge current cancellation under appropriate device biasing yields a large, spin-dependent current signal even with modest spin injection efficiency into the semiconductor, while reliance on ballistic, rather than diffusive, carrier transport is expected to enable robust scalability to smaller dimensions. Magnetocurrent in excess of 200% is measured with spin injection efficiency of 5%, and a spin-dependent ballistic carrier transport model is shown to yield accurate, quantitative predictions of current-voltage behavior.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 04, 2011
- Source ID
- 10.1063/1.3567922
Entities
People
- Edward T. Yu
- Lei Zhu
Organizations
- Office of Naval Research
- University of Texas at Austin