Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
Abstract
A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 21, 2011
- Source ID
- 10.1063/1.3569715
Entities
People
- F. Ren
- J. W. Johnson
- K. S. Jones
- L. Lu
- M. R. Holzworth
- N. G. Rudawski
- S. J. Pearton
- T. S. Kang
Organizations
- Air Force Office of Scientific Research
- Kopin Corporation
- University of Florida