Bandgap opening in boron nitride confined armchair graphene nanoribbon
Abstract
Graphene nanoribbons (GNRs) have seized strong interest. Recent studies show that domains of graphene in monolayer hexagonal boron nitride (h-BN) can be synthesized. Using the first principle calculations we have studied the electronic properties of armchair GNRs (AGNRs) confined by BN nanoribbons (BNNRs). While, H-terminated AGNRs have a close to zero bandgap with the width index of 3p+2, AGNRs confined by BNNRs exhibit a considerable bandgap. The bandgap opening is primarily due to perturbation to the on-site potentials of atoms at AGNR edges. A tight binding model is parameterized to confirm this mechanism and enable future device studies.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 04, 2011
- Source ID
- 10.1063/1.3571282
Entities
People
- Gyungseon Seol
- Jing Guo
Organizations
- National Science Foundation
- Office of Naval Research
- University of Florida