Enhancing the electron mobility of SrTiO3 with strain
Abstract
We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm2/V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 28, 2011
- Source ID
- 10.1063/1.3571447
Entities
People
- Bharat Jalan
- Glenn E. Beltz
- Pouya Moetakef
- S. J. Allen
- Susanne Stemmer
Organizations
- Army Research Office
- National Science Foundation
- University of California