Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Abstract

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (SSET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the SSET are observed at a temperature of 0.3 K. Coupling of the SSET to the QD is confirmed by using the SSET to perform sensing of the QD charge state.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 04, 2011
Source ID
10.1063/1.3572033

Entities

People

  • A. J. Rimberg
  • D. E. Savage
  • Fei Chen
  • Feng Pan
  • M. A. Eriksson
  • M. G. Lagally
  • Mingyun Yuan
  • T. J. Gilheart
  • Zhen Yang

Organizations

  • Army Research Office
  • Dartmouth College
  • National Science Foundation
  • United States Department of Energy
  • University of Wisconsin–Madison

Tags

Fields of Study

  • Physics

Readers

  • Information Retrieval
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots