Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
Abstract
Minority carrier diffusion lengths (Ld) are measured for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a technique based on imaging of recombination luminescence. The effect of shell material on transport properties is measured. An AlGaN shell produces Ld values in excess of 1 μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of Ld on diameter is observed for uncoated nanowires.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 28, 2011
- Source ID
- 10.1063/1.3573832
Entities
People
- A. Alec Talin
- C. P. Ong
- George T. Wang
- Lee Baird
- N. M. Haegel
- Qiming Li
- R. Adam Cole
Organizations
- Defense Advanced Research Projects Agency
- National Nuclear Security Administration
- National Science Foundation
- Naval Postgraduate School
- Sandia National Laboratories