Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Abstract
We use ultrahigh vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers, which are then annealed between 1250 and 1450 °C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction in the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the nonpolished samples.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 28, 2011
- Source ID
- 10.1063/1.3575202
Entities
People
- Alfred Grill
- Christopher M. Breslin
- Christos Dimitrakopoulos
- Jack O. Chu
- Mahadevaiyer Krishnan
- Robert Wisnieff
- Timothy J. Mcardle
- Yu Zhu
- Zihong Liu
Organizations
- Defense Advanced Research Projects Agency
- International Business Machines Corporation (Armonk, NY)