High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

Abstract

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 28, 2011
Source ID
10.1063/1.3575563

Entities

People

  • C. J. Neufeld
  • Christophe A. Hurni
  • E. Matioli
  • J. R. Lang
  • James S. Speck
  • S. C. Cruz
  • Umesh K. Mishra

Organizations

  • Defense Advanced Research Projects Agency
  • University of California

Tags

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing