Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers

Abstract

Measurements of thermal conductivity Λ by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO3. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with Λ comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low Λ. For homoepitaxial layers, the decrease in Λ created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface.

Document Details

Document Type
Pub Defense Publication
Publication Date
May 30, 2011
Source ID
10.1063/1.3579993

Entities

People

  • Arun Majumdar
  • Bharat Jalan
  • Charles M. Brooks
  • Chen-wei Liang
  • Darrell G. Schlom
  • David G. Cahill
  • Dong-wook Oh
  • Jayakanth Ravichandran
  • Lane W Martin
  • Mark Huijben
  • Ramamoorthy Ramesh
  • Susanne Stemmer
  • Wolter Siemons

Organizations

  • ARPA-E
  • Air Force Office of Scientific Research
  • Cornell University
  • United States Department of Energy
  • University of California
  • University of Illinois Urbana–Champaign
  • University of Twente

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition