ZnO thin film transistor immunosensor with high sensitivity and selectivity
Abstract
A zinc oxide thin film transistor-based immunosensor (ZnO-bioTFT) is presented. The back-gate TFT has an on-off ratio of 108 and a threshold voltage of 4.25 V. The ZnO channel surface is biofunctionalized with primary monoclonal antibodies that selectively bind with epidermal growth factor receptor (EGFR). Detection of the antibody-antigen reaction is achieved through channel carrier modulation via pseudo double-gating field effect caused by the biochemical reaction. The sensitivity of 10 fM detection of pure EGFR proteins is achieved. The ZnO-bioTFT immunosensor also enables selectively detecting 10 fM of EGFR in a 5 mg/ml goat serum solution containing various other proteins.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 25, 2011
- Source ID
- 10.1063/1.3582555
Entities
People
- Aniruddh Solanki
- Chieh-jen Ku
- Ki-bum Lee
- Pavel Ivanoff Reyes
- Yicheng Lu
- Ziqing Duan
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Rutgers University