Room temperature device performance of electrodeposited InSb nanowire field effect transistors
Abstract
InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed as transistor channels. The 100 nm diameter nanowires had a zinc blende crystal structure. Single-nanowire field-effect transistors (NW-FETs) with a channel length of 500 nm exhibited on-currents of ∼40 μA, on/off ratios of ∼16–20, drain conductances of ∼71 μS and field-effect electron mobility of ∼1200 cm2 V−1 s−1. Compared with reported NW-FETs, the on-current is large and the current saturation occurs at low source-drain voltages. These characteristics can be understood in terms of velocity saturation effects with enhanced scattering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 13, 2011
- Source ID
- 10.1063/1.3587638
Entities
People
- Collin J. Delker
- David B. Janes
- Dmitri Zakharov
- Suprem R. Das
- Timothy D. Sands
- Yong P. Chen
Organizations
- Defense Advanced Research Projects Agency
- Purdue University