Charge carrier lifetime in boron carbide thin films
Abstract
Charge carrier lifetime is a critical parameter to improve the conversion efficiency of radioisotope power sources and the sensitivity of neutron detectors based on boron carbide thin films. The effective charge carrier lifetime in B4C boron carbide films has been investigated by using transient photoconductivity decay. The carrier lifetime depends on the characterization conditions as well as the structure of the films. The measured lifetime could be up to ∼1 ms in B4C film, which is much longer than that in conventional semiconductors. The photoresistance change in B4C films and the photovoltaic response of B4C/n-Si(100) heterojunctions have also been studied.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 09, 2011
- Source ID
- 10.1063/1.3589816
Entities
People
- Douglas B. Chrisey
- Ruqiang Bao
- Zijie Yan
Organizations
- Defense Advanced Research Projects Agency
- Rensselaer Polytechnic Institute