High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
Abstract
We demonstrate high quantum efficiency InGaN/GaN multiple quantum well (QW) solar cells with spectral response extending out to 520 nm. Increasing the number of QWs in the active region did not reduce the carrier collection efficiency for devices with 10, 20, and 30 QWs. Solar cells with 30 QWs and an intentionally roughened p-GaN surface exhibited a peak external quantum efficiency (EQE) of 70.9% at 390 nm, an EQE of 39.0% at 450 nm, an open circuit voltage of 1.93 V, and a short circuit current density of 2.53 mA/cm2 under 1.2 suns AM1.5G equivalent illumination.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2011
- Source ID
- 10.1063/1.3591976
Entities
People
- C. J. Neufeld
- J. R. Lang
- James S. Speck
- M. Iza
- R. M. Farrell
- S. C. Cruz
- Sallie Ann Keller
- Shuji Nakamura
- Steven P. DenBaars
- Umesh K. Mishra
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- United States Department of Energy
- University of California