Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
Abstract
Magnetic-field dependent Hall-effect measurements and mobility spectrum analysis were employed to study anisotropic transport in N-polar GaN/Al0.3Ga0.7N heterostructures grown on vicinal sapphire substrates. The significant anisotropy in the mobility in the parallel and perpendicular directions to the miscut direction was accompanied by a slight anisotropy in charge density. A single electron species was found in the direction parallel to the steps resulting from growth on the vicinal substrates; while in the perpendicular direction two distinct electrons peaks were evident at T≤150 K. The lower average mobility in the perpendicular direction is attributed to interface roughness scattering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 30, 2011
- Source ID
- 10.1063/1.3595341
Entities
People
- B. D. Nener
- David F. Brown
- G. A. Umana-membreno
- G. Parish
- L. Faraone
- S. Kolluri
- Sallie Ann Keller
- T. B. Fehlberg
- Umesh K. Mishra
Organizations
- Air Force Office of Scientific Research
- University of California
- University of Western Australia