Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime

Abstract

Ambient-environment Kelvin probe microscopy of many (10 μm)2 areas of single-layer graphene on SiC(0001) shows area-to-area rms surface potential variation of 12 meV. Electronic transport data are consistent with the minimum conductivity regime. Together the data indicate a highly uniform carrier concentration with a small magnitude (<1012 cm−2). We conclude that the previously reported large spread in carrier densities from Hall measurements on similar samples is an artifact of electron–hole puddling in the minimum conductivity regime.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 13, 2011
Source ID
10.1063/1.3595360

Entities

People

  • A. E. Curtin
  • C. R. Eddy Jr.
  • D. Kurt Gaskill
  • J. L. Tedesco
  • M. S. Fuhrer
  • R. L. Myers-ward

Organizations

  • Office of Naval Research
  • United States Naval Research Laboratory
  • University of Maryland

Tags

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene