XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films
Abstract
To investigate the doping and surface electron accumulation layer properties of tin dioxide (SnO2), the Fermi level and surface band bending of unintentionally-, antimony (Sb)-, and indium (In)-doped SnO2 (101) films were investigated by aluminum and hard x-ray photoelectron spectroscopy, which probe surface and bulk regions, respectively. The Fermi level was above the conduction band minimum (CBM) for unintentionally-doped films and for highly Sb-doped films, which showed the conduction band feature, and deep in the band gap for In-doped films. The band bending and surface Fermi level indicated a surface Fermi level pinning in the CBM.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 06, 2011
- Source ID
- 10.1063/1.3596449
Entities
People
- H. Yoshikawa
- James S. Speck
- K. Kobayashi
- M. E. White
- M. Y. Tsai
- N. Ohashi
- Oliver Bierwagen
- T. Chikyow
- T. Nagata
- Yohachi Yamashita
Organizations
- Air Force Office of Scientific Research
- National Institute for Materials Science
- University of California