Boron nitride substrates for high mobility chemical vapor deposited graphene
Abstract
Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 13, 2011
- Source ID
- 10.1063/1.3599708
Entities
People
- A. Zettl
- K. Watanabe
- M. F. Crommie
- Takashi Taniguchi
- W. Gannett
- William Regan
Organizations
- Lawrence Berkeley National Laboratory
- National Institute for Materials Science
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California