Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

Abstract

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a ∼10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (∼35 ps) along with a slow decaying persistent photocurrent (∼80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 13, 2011
Source ID
10.1063/1.3600061

Entities

People

  • Bahram Nabet
  • Eric M. Gallo
  • Guannan Chen
  • Jonathan E Spanier
  • Marc Currie
  • Nico Lovergine
  • Paola Prete
  • Terrence Mcguckin

Organizations

  • Army Research Office
  • Consiglio Nazionale delle Ricerche
  • Drexel University
  • National Science Foundation
  • Office of Naval Research
  • United States Naval Research Laboratory
  • University of Salento

Tags

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics