High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer
Abstract
In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described. Optimized top-gate TFTs possess mobilities of up to 1 cm2/V s with low contact resistance and reduced hysteresis in air. Dual-gate devices possess higher drive currents as well as improved subthreshold and above threshold characteristics compared to single-gate devices. We also describe the reasons that dual-gate devices result in improved performance. The good stability of this polymer combined with their promising electrical properties make this material a very promising semiconductor for printable electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 20, 2011
- Source ID
- 10.1063/1.3601928
Entities
People
- Ananth Dodabalapur
- Prashant Sonar
- Tae-jun Ha
Organizations
- Air Force Office of Scientific Research
- Institute of Materials Research and Engineering
- University of Texas at Austin