Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices
Abstract
We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 27, 2011
- Source ID
- 10.1063/1.3605571
Entities
People
- Alexandre Bur
- Christopher S Lynch
- Gregory P. Carman
- Kang L. Wang
- Kin Wong
- Pedram Khalili Amiri
- Ping Zhao
- Tao Wu
Organizations
- Air Force Office of Scientific Research
- University of California