Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)
Abstract
The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 °C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 04, 2011
- Source ID
- 10.1063/1.3609326
Entities
People
- Cameron Keenan
- David Lederman
- Phillip Tabor
- Sergei Urazhdin
Organizations
- Office of Naval Research
- West Virginia University