Pressure and temperature dependence of dissociative and non-dissociative electron attachment to CF3: Experiments and kinetic modeling

Abstract

The kinetics of electron attachment to CF3 as a function of temperature (300–600 K) and pressure (0.75–2.5 Torr) were studied by variable electron and neutral density attachment mass spectrometry exploiting dissociative electron attachment to CF3Br as a radical source. Attachment occurs through competing dissociative (CF3 + e− → CF2 + F−) and non-dissociative channels (CF3 + e− → CF3−). The rate constant of the dissociative channel increases strongly with temperature, while that of the non-dissociative channel decreases. The rate constant of the non-dissociative channel increases strongly with pressure, while that of the dissociative channel shows little dependence. The total rate constant of electron attachment increases with temperature and with pressure. The system is analyzed by kinetic modeling in terms of statistical theory in order to understand its properties and to extrapolate to conditions beyond those accessible in the experiment.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 03, 2011
Source ID
10.1063/1.3614471

Entities

People

  • Albert A Viggiano
  • Anatol I. Maergoiz
  • Jeffrey F. Friedman
  • Jürgen Troe
  • Nicholas S Shuman
  • Thomas M Miller

Organizations

  • Air Force Office of Scientific Research
  • Air Force Research Laboratory
  • German Research Foundation
  • University of Göttingen

Tags

Readers

  • Molecular Photonics/Laser Physics

Technology Areas

  • Microelectronics