Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers
Abstract
Unrelaxed InAs1−xSbx layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1−xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 μm at 150 K. The minority carrier lifetime measured at 77 K for InAs0.8Sb0.2 was τ = 250 ns.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 03, 2011
- Source ID
- 10.1063/1.3650473
Entities
People
- D. Donetsky
- Dafu Wang
- G. Belenky
- G. Kipshidze
- L. Shterengas
- Stefan P. Svensson
- Wendy L. Sarney
Organizations
- Army Research Office
- National Science Foundation
- Stony Brook University