Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate
Abstract
This letter presents radio frequency (RF) characterization of flexible microwave switches using single-crystal silicon nanomembranes (SiNMs) on plastic substrate under various uniaxial mechanical tensile bending strains. The flexible switches shows significant/negligible performance enhancement on strains under on/off states from dc to 10 GHz. Furthermore, an RF/microwave strain equivalent circuit model is developed and reveals the most influential factors, and un-proportional device parameters change with bending strains. The study demonstrates that flexible microwave single-crystal SiNM switches, as a simple circuit example towards the goal of flexible monolithic microwave integrated circuits, can be properly operated and modeled under mechanical bending conditions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 10, 2011
- Source ID
- 10.1063/1.3651276
Entities
People
- George K. Celler
- Guoxuan Qin
- Hao-chih Yuan
- Jianguo Ma
- Zhenqiang Ma
Organizations
- Air Force Office of Scientific Research
- National Natural Science Foundation of China
- Tianjin University
- University of Wisconsin–Madison