Room-temperature organic-based spin polarizer
Abstract
We report a magnetic tunnel junction operating at room-temperature with organic magnetic semiconductor V[TCNE]x (x ∼ 2, TCNE: tetracyanoethylene) and Fe as the spin polarizer and analyzer while 10 nm rubrene layer serves as the tunnel barrier between them. At room-temperature, the magnetoresistance (MR) presents 16.7% of its peak value at 100 K. We observed sign inversion of MR with increasing temperature, while the sign of the MR is independent of the polarity of the bias voltages. Our results suggest that V[TCNE]x is a promising material for room-temperature spintronic applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 10, 2011
- Source ID
- 10.1063/1.3651329
Entities
People
- Arthur J. Epstein
- Bin Li
- Chi-yueh Kao
- Jung-woo Yoo
- Vladimir N. Prigodin
- Y. Lu
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Ohio State University
- Ulsan National Institute of Science and Technology
- United States Department of Energy