Dynamically controlled charge sensing of a few-electron silicon quantum dot

Abstract

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitally-controlled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge upset events. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 12, 2011
Source ID
10.1063/1.3654496

Entities

People

  • Andrew S. Dzurak
  • F. A. Zwanenburg
  • Henry Yang
  • Wee Han Lim

Organizations

  • Army Research Office
  • University of New South Wales

Tags

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems
  • Quantum Computing
  • Quantum Science - Quantum Dots