Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates
Abstract
Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 24, 2011
- Source ID
- 10.1063/1.3655995
Entities
People
- B. J. Kirby
- D. J. Smith
- H. Cao
- J. K. Furdyna
- J. Leiner
- Jialu Fan
- M. Dobrowolska
- X. Liu
- Y.-h. Zhang
- Yanran P. Chen
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- National Institute of Standards and Technology
- Purdue University
- University of Notre Dame