Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
Abstract
We report on the fabrication of p-channel thin film transistors (TFTs) and vertically stacked complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel indium gallium zinc oxide TFT fabricated on a flexible polyethersulfone substrate. The p- and n-channel TFTs showed saturation mobility values of 0.0022 and 1.58 cm2/Vs, respectively, yielding inverters with a gain of 120 V/V. This level of performance was achieved by reducing the copper oxide channel thickness, allowing oxygen diffusion into the copper oxide layer at medium processing temperature (150 °C).
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 24, 2011
- Source ID
- 10.1063/1.3656974
Entities
People
- A. Dindar
- B. Kippelen
- C. Fuentes-hernandez
- J. B. Kim
Organizations
- Georgia Tech
- National Science Foundation
- Office of Naval Research