Inelastic carrier lifetime in bilayer graphene

Abstract

We present a first-principles calculation of the inelastic carrier lifetimes in pristine and doped bilayer graphene. The scattering rate arising from electron-electron interactions is smaller than that in graphene by 20–40% on average, and is highly anisotropic. On the other hand, the scattering rate arising from electron-phonon interactions is similar in magnitude to that in graphene and is isotropic.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 16, 2012
Source ID
10.1063/1.3675877

Entities

People

  • Catalin D. Spataru
  • Cheol-hwan Park
  • Feliciano Giustino
  • Marvin L. Cohen
  • Steven G Louie

Organizations

  • Lawrence Berkeley National Laboratory
  • National Science Foundation
  • Office of Naval Research
  • United States Department of Energy
  • University of Oxford

Tags

Fields of Study

  • Physics

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Nanoscale Plasmonic Nanotechnology
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene