Strain relaxation analysis of LaAlO3/SrTiO3 heterostructure using reciprocal lattice mapping

Abstract

Strain-relaxation in LaAlO3/SrTiO3 heterostructures was systematically investigated with LaAlO3 film thickness in the range 4.9-84 nm. Heterostructures were characterized using reciprocal lattice mapping (RLM), high resolution rocking curve, and x-ray reflectivity. RLM enables the measurement of lattice constant with accuracy of 10−6 nm. Lattice constant, mismatch, and strain are independently determined in both out-of-plane and in-plane directions. Heterostructures are tetragonally distorted over the entire range of film thickness, even in the film with thickness of 84 nm, in which plastic deformation occurred. This strain-relaxation analysis of LaAlO3/SrTiO3 heterostructure contributes, on the experimental basis, to the knowledge of the strained heterostructure interfaces from thin film growth point of view.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 13, 2012
Source ID
10.1063/1.3685463

Entities

People

  • Alp Sehirlioglu
  • Wei Wei

Organizations

  • Air Force Office of Scientific Research
  • Case Western Reserve University

Tags

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.