Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy
Abstract
An epitaxial layer of SrTiO3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiOx interlayer can be formed which alters the strain state of SrTiO3. We report a study of strain relaxation in SrTiO3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO3 on Si (001). Understanding the process of strain relaxation of SrTiO3 on silicon will be useful for controlling the SrTiO3 lattice constant for lattice matching with functional oxide overlayers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 15, 2012
- Source ID
- 10.1063/1.3695998
Entities
People
- Agham Posadas
- Alexander A Demkov
- Catherine Dubourdieu
- Chih-Kang Shih
- Dina H. Triyoso
- Jean Jordan-sweet
- John Bruley
- Miri Choi
- N. David Theodore
- Rytis Dargis
Organizations
- Freescale Semiconductor
- GlobalFoundries
- International Business Machines Corporation (Armonk, NY)
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of Texas at Austin