A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy

Abstract

Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional theory. First-principle calculations identify that the low-energy barrier direction of the top layer displacement is toward a structure where none of the carbon pz orbitals overlap, while the high-energy barrier direction is toward AA stacking. Each directional shift yields a real-space surface charge density similar to graphene; however, the low-energy barrier direction requires only one bond length to convert ABA (Bernal) to ABC (rhombohedral).

Document Details

Document Type
Pub Defense Publication
Publication Date
May 14, 2012
Source ID
10.1063/1.4716475

Entities

People

  • D. Qi
  • J. K. Schoelz
  • L. Bellaiche
  • M. L. Ackerman
  • P. M. Thibado
  • Peipeng Xu
  • S. D. Barber
  • Salvador Barraza-lopez
  • Tobias Bothwell
  • Yurong Yang

Organizations

  • Nanjing University of Aeronautics and Astronautics
  • Office of Naval Research
  • University of Arkansas

Tags

Fields of Study

  • Physics

Readers

  • Electrochemical Surface Science
  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space