Optically addressed near and long-wave infrared multiband photodetectors
Abstract
Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 109 cm Hz1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 11, 2012
- Source ID
- 10.1063/1.4729004
Entities
People
- J. L. Reno
- O. O. Cellek
- Y.-h. Zhang
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- Sandia National Laboratories