Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature
Abstract
We demonstrate that a metal-insulator phase transition can be electrothermally actuated in the correlated complex oxide SmNiO3 (SNO) above room temperature from current-voltage measurements on thin film two-terminal devices. We simulate the internal temperature of SmNiO3 as a function of applied dc power by a Joule heating mechanism with substrate/electrode dissipation and find good agreement with experiment and device scaling. The results are relevant towards integrating correlated oxide phase transition functionality into semiconductor electronic/optoelectronic platforms.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 15, 2012
- Source ID
- 10.1063/1.4729490
Entities
People
- B. Viswanath
- Shriram Ramanathan
- Sieu D. Ha
Organizations
- Army Research Office
- Harvard University
- National Science Foundation