Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates
Abstract
We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D33 ≈ 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 24, 2012
- Source ID
- 10.1063/1.4754713
Entities
People
- Bo Chen
- D. Viehland
- Jie-fang Li
- Ravindranath Viswan
- Yanxi Li
- Zhiguang Wang
Organizations
- Air Force Office of Scientific Research
- United States Department of Energy
- Virginia Tech