Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor
Abstract
We report the operation of a radio frequency superconducting single-electron transistor (rf-SSET) as a charge sensor for single and double Si/SiGe quantum dots (QDs). Real-time electron tunneling events are observed from the reflected signal of the rf-SSET with a charge sensitivity of 4×10−6 e/Hz, which demonstrates a fast charge detection time of a few tens of microseconds. Measurements of the reflected power are used to map out the stability diagram of the double quantum dot.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 01, 2012
- Source ID
- 10.1063/1.4754827
Entities
People
- A. J. Rimberg
- D. E. Savage
- M. A. Eriksson
- M. G. Lagally
- Mingyun Yuan
- Zhen Yang
Organizations
- Army Research Office
- Dartmouth College
- University of Wisconsin–Madison