Polariton emission characteristics of a modulation-doped multiquantum-well microcavity diode

Abstract

The role of polariton-electron scattering on the performance characteristics of an electrically injected GaAs-based quantum well (QW) microcavity diode in the strong coupling regime has been investigated. An electron gas is introduced in the quantum wells by modulation doping with silicon dopants. It is observed that polariton-electron scattering suppresses the relaxation bottleneck in the lower polariton branch. However, it is not adequate to produce a degenerate coherent condensate at k∥ ∼ 0 and coherent emission.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 24, 2012
Source ID
10.1063/1.4755777

Entities

People

  • Ayan Das
  • Bo Xiao
  • Pallab K. Bhattacharya
  • Sishir Bhowmick

Organizations

  • Air Force Office of Scientific Research
  • University of Michigan

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing