Field-effect diode based on electron-induced Mott transition in NdNiO3

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2012
Source ID
10.1063/1.4757865

Entities

People

  • D. J. Meyers
  • E. J. Moon
  • J. Chakhalian
  • J. W. Freeland
  • M. Kareev
  • S. Urazhdin
  • W. L. Lim

Organizations

  • National Science Foundation
  • Office of Naval Research

Tags

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene