Relative intensity noise of a quantum well transistor laser

Abstract

A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of −151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a charge storage device) at the same output power, the transistor laser (a charge flow device) has a better than 28 dB (number dependent on the laser device design) peak RIN advantage.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 08, 2012
Source ID
10.1063/1.4760225

Entities

People

  • Furui Tan
  • MengKe Feng
  • N. Holonyak Jr.
  • R. Bambery

Organizations

  • Army Research Office
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Physics

Readers

  • Acoustics.
  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing