Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
Abstract
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ∼350 cm2/Vs at 300 K and ∼7400 cm2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 15, 2012
- Source ID
- 10.1063/1.4760226
Entities
People
- Chang Liu
- Haoran Yang
- Helin Cao
- Jonathan Pierce
- M. Zahid Hasan
- R. Venkatasubramanian
- Yong P. Chen
- Yue Wu
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Princeton University
- Purdue University
- RTI International
- United States Department of Energy