Temperature-dependent mechanical-resonance frequencies and damping in ensembles of gallium nitride nanowires

Abstract

We have measured singly clamped cantilever mechanical-resonances in ensembles of as-grown gallium nitride nanowires (GaN NWs), from 12 K to 320 K. Resonance frequencies are approximately linearly dependent on temperature near 300 K with relative shifts of 40 ± 20 ppm/K, consistent with temperature-dependent elastic moduli. Below 100 K, we find that some GaN NWs have mechanical quality factors well above 400 000, at mechanical resonance frequencies near 1 MHz. We also observe a correlation between increased amplitude of dissipation and increased temperature dependence of resonance frequencies. The microwave homodyne detection technique we use is simple, allows for the investigation of as-grown or processed NWs, and is sensitive enough to observe the thermal motion of individual NWs while providing for the simultaneous measurement of large ensembles of NW mechanical resonances.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 22, 2012
Source ID
10.1063/1.4761946

Entities

People

  • C. T. Rogers
  • J. R. Montague
  • K. A. Bertness
  • N. A. Sanford
  • V. M. Bright

Organizations

  • Defense Advanced Research Projects Agency
  • National Institute of Standards and Technology
  • National Science Foundation
  • University of Colorado

Tags

Fields of Study

  • Physics

Readers

  • Atmospheric Science/Meteorology
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems