Single crystal of LiInSe2 semiconductor for neutron detector
Abstract
Single crystals of semiconductor-grade lithium indium selenide (LiInSe2) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe2, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 1010 Ω·cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 12, 2012
- Source ID
- 10.1063/1.4762002
Entities
People
- A. Bürger
- A. Stowe
- B. Wiggins
- E. Rowe
- E. Tupitsyn
- L. Matei
- M. Groza
- P. Bhattacharya
Organizations
- Army Research Office
- Fisk University
- National Science Foundation
- Vanderbilt University
- Y-12 National Security Complex