Fabrication of samples for scanning probe experiments on quantum spin Hall effect in HgTe quantum wells
Abstract
We present a fabrication process for devices on HgTe quantum wells through which the quantum spin Hall regime can be reached without the use of a top-gate electrode. We demonstrate that a nominally undoped HgTe quantum well can be tuned from p-type to n-type, crossing through the quantum spin Hall regime, using only a back-gate hundreds of microns away. Such structures will enable scanning probe investigations of the quantum spin Hall effect that would not be possible in the presence of a gate electrode on the surface of the wafer. All processes are kept below 80 °C to avoid degradation of the heat-sensitive HgTe quantum wells.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 15, 2012
- Source ID
- 10.1063/1.4767362
Entities
People
- A. G. F. Garcia
- C. Ames
- C. Brüne
- D. Goldhaber-gordon
- H. Buhmann
- L. W. Molenkamp
- M. Baenninger
- M. König
- M. Mühlbauer
- P. Leubner
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Stanford University
- University of Würzburg