Impact of thermal boundary conductances on power dissipation and electrical breakdown of carbon nanotube network transistors
Abstract
We study the impact of thermal boundary conductance (TBC) at carbon nanotube (CNT)-substrate interfaces and CNT junctions on power dissipation and breakdown in CNT network based thin film transistors (CN-TFTs). Comparison of our results from an electro-thermal transport model of CN-TFTs to experimental measurements of power dissipation and temperature profiles allows us to estimate the average CNT-SiO2 TBC as g ∼ 0.16 Wm−1 K−1 and the TBC at CNT junctions as GC ∼ 2.4 pWK−1. We find the peak power dissipation in CN-TFTs is more strongly correlated to the TBC of the CNT-substrate interface than to the TBC at CNT junctions. Molecular dynamics simulations of crossed CNT junctions also reveal that the top CNT is buckled over ∼30 nm lengths, losing direct contact with the substrate and creating highly localized hot-spots. Our results provide new insights into CNT network properties which can be engineered to enhance performance of CN-TFTs for macro and flexible electronics applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2012
- Source ID
- 10.1063/1.4767920
Entities
People
- Ashkan Behnam
- David Estrada
- Eric Pop
- Liang Chen
- Man Prakash Gupta
- Satish Kumar
Organizations
- Georgia Tech
- National Science Foundation
- Office of Naval Research
- University of Illinois Urbana–Champaign