Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
Abstract
Contactless electroreflectance (CER) has been applied to study the Fermi-level position on GaSb surface in n-type and p-type GaSb Van Hoof structures. CER resonances, followed by strong Franz-Keldysh oscillation of various periods, were clearly observed for two series of structures. This period was much wider (i.e., the built-in electric field was much larger) for n-type structures, indicating that the GaSb surface Fermi level pinning position is closer to the valence-band than the conduction-band. From analysis of the built-in electric fields in undoped GaSb layers, it was concluded that on GaSb surface the Fermi-level is located ∼0.2 eV above the valence band.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2012
- Source ID
- 10.1063/1.4770413
Entities
People
- H. P. Nair
- J. Misiewicz
- M. Latkowska
- R. Kudrawiec
- Seth R. Bank
- W. Walukiewicz
Organizations
- Army Research Office
- Lawrence Berkeley National Laboratory
- University of Texas at Austin
- Wrocław University of Science and Technology