Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons
Abstract
The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm−2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 17, 2012
- Source ID
- 10.1063/1.4772543
Entities
People
- C. P. Morath
- E. Plis
- J. E. Hubbs
- S. Krishna
- S. Myers
- V. M. Cowan
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- University of New Mexico