Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy
Abstract
We report on the dielectric properties of BaxSr1−xTiO3 (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x ≲ 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 17, 2012
- Source ID
- 10.1063/1.4773034
Entities
People
- Adam J. Hauser
- Adam P. Kajdos
- Evgeny Mikheev
- Susanne Stemmer
Organizations
- Office of Naval Research