A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors
Abstract
Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2013
- Source ID
- 10.1063/1.4773186
Entities
People
- Kai Xiao
- Ming Shao
- Minren Lin
- Q. M. Zhang
- Quinn Burlingame
- Shan Wu
- Xiangzhong Chen
Organizations
- Oak Ridge National Laboratory
- Office of Naval Research
- Pennsylvania State University